STPS20H100CT datasheet(3/7 Pages) STMICROELECTRONICS

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STPS20H100CT/CF/CG/CG-1

3/7

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

t(s)

IM(A)

Tc=50

°C

Tc=75

°C

Tc=125

°C

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220AB, D

2PAK, I2PAK)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 5: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

(TO-220AB, D

2PAK, I2PAK).

102030405060708090

100

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

IR(

µA)

VR(V)

Tj=125

°C

Tj=100

°C

Tj=25

°C

Tj=150

°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

200

500

1000

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

1E-3

1E-2

1E-1

1E+0

100

120

140

IM(A)

δ=0.5

t(s)

Tj=125

°C

Tj=75

°C

Tj=50

°C

Fig. 4: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (ISOWATT220AB).

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

tp(s)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

(ISOWATT220AB).

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