DO-214AC datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

IR(mA)

Tj=125°C

Tj=25°C

Tj=100°C

Tj=150°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values).

100

500

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.10

1.00

10.00

IFM(A)

Tj=100°C

Tj=150°C

Tj=25°C

VFM(V)

Fig. 7-1: Forward voltage drop versus forward cur-

rent (typical values, high level).

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-a)/Rth(j-a)

δ=tp/T

Fig. 4-1: Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

printed circuit board, e(Cu)=35

µm, recommended

pad layout) (SMB).

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-a)/Rth(j-a)

tp(s)

δ=tp/T

Fig. 4-2: Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

printed circuit board, e(Cu)=35

µm, recommended

pad layout) (SMA).

0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

IFM(A)

Tj=125°C

Typical values

Tj=150°C

Tj=100°C

Tj=25°C

VFM(V)

Fig. 7-2: Forward voltage drop versus forward cur-

rent (maximum values, low level).

STPS1L30A/U

3/5

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