STP7NB80 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	STP7NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

1 / 9 page

STP7NB80

STP7NB80FP

N - CHANNEL 800V - 1.2

Ω - 6.5A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.2

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

April 1999

TO-220

TO-220FP

1

2

3

1

2

3

TYPE

VDSS

RDS(on)

ID

ST P7NB80

ST P7NB80FP

800 V

<1.5

Ω

<1.5

Ω

6.5 A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

STP7NB80

STP7NB80F P

VDS

Drain-source Volt age (VGS =0)

800

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC6.5

6.5(*)

A

ID

Drain Current (continuous) at Tc = 100

oC4.1

4.1(*)

A

IDM (

•)

Drain Current (pulsed)

26

A

Ptot

T otal Dissipation at Tc =25

oC

135

40

W

Derat ing Factor

1.08

0.32

W /

o C

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulat ion Withstand Voltage (DC)

--

2000

o C

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operat ing Junction T emperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 6.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(

*) Limited only maximum temperature allowed

1/9

Số phần tương tự - STP7NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	STP7NB80	372Kb / 2P	isc N-Channel MOSFET Transistor
Inchange Semiconductor ...	STP7NB80FP	319Kb / 2P	isc N-Channel MOSFET Transistor

More results

Mô tả tương tự - STP7NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET Oct-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET Apr-2003
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET Sep-2001
	STP5NB100	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Feb-2000
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP7NC80Z	542Kb / 13P	N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™ II MOSFET May-2003
	STW7NB80	88Kb / 8P	N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET Dec-1999
	STW8NB80	50Kb / 5P	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET Jan-1999

More results

STP7NB80 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

STP7NB80 bảng dữ liệu(HTML) 1 Page - STMicroelectronics

Số phần tương tự - STP7NB80

Mô tả tương tự - STP7NB80

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL