P60NS04Z datasheet(1/8 Pages) STMICROELECTRONICS

tên linh kiện	P60NS04Z

Giải thích chi tiết về linh kiện	N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

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STP60NS04Z

N - CHANNEL CLAMPED 10m

Ω - 60A - TO-220

FULLY PROTECTED MESH OVERLAY

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.010

Ω

s

100% AVALANCHE TESTED

s

LOW CAPACITANCE AND GATE CHARGE

s

175

oC MAXIMUM JUNCTION

TEMPERATURE

DESCRIPTION

This fully clamped Mosfet is produced by using

the latest advanced Company’s Mesh Overlay

process which is based on a novel strip layout.

The inherent benefits of the new technology

coupled with the extra clamping capabilities make

this product particularly suitable for the harshest

operation conditions such as those encountered

in

the

automotive environment.

Any

other

application requiring extra ruggedness is also

recommended.

APPLICATIONS

s

ABS, SOLENOID DRIVERS

s

MOTOR CONTROL

s

DC-DC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

December 1999

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

CLAMPED

V

VDG

Drain- gate Voltage

CLAMPED

V

VGS

G ate-source Volt age

CLAMPED

V

ID

Drain Current (continuous) at Tc =25

oC60

A

ID

Drain Current (continuous) at Tc = 100

oC42

A

IDG

Drain Gate Current (continuous)

± 50

mA

IGS

G ate Source Current (cont inuous)

± 50

mA

IDM (

•)

Drain Current (pulsed)

240

A

Ptot

T otal Dissipation at Tc =25

oC

140

W

Derating Factor

0.93

W /

o C

VESD (G-S) Gate-Source ESD (HBM - C= 100pF, R=1.5 k

Ω)2

kV

VESD(G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 k

Ω)4

kV

VESD(D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 k

Ω)4

kV

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

-40 to 175

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STP60NS04Z

CLAMPED

<0.015

Ω

60 A

1/8

Số phần tương tự - P60NS04Z

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	P60NS04ZB	256Kb / 13P	N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET 04-Oct-2006

More results

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