P5NB80 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	P5NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

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STP5NB80

STP5NB80FP

N - CHANNEL 800V - 1.8

Ω - 5A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.8

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

STP5NB80

STP5NB80F P

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gat e Voltage (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at Tc =25

o C5

5(*)

A

ID

Drain Current (cont inuous) at Tc = 100

oC

3.2

3. 2(*)

A

IDM(

•)

Drain Current (pulsed)

20

A

Ptot

T otal Dissipation at Tc =25

oC

110

40

W

Derating F act or

0.88

0.32

W /

oC

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

VISO

I nsulation Wit hstand Voltage (DC)



2000

V

Tstg

Storage T emperature

-65 to 150

oC

Tj

Max. Operating Junction T emperature

150

oC

(*) Limited only by maximum temperature allowed

( 1)ISD

≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST P5NB80

ST P5NB80FP

800 V

<2.2

Ω

<2.2

Ω

5A

1/9

Số phần tương tự - P5NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	P5NB100FP	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Feb-2000
	P5NB40FP	71Kb / 7P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Oct-1997
	P5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999

More results

Mô tả tương tự - P5NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB5NB80	87Kb / 8P	N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET Mar-1999
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET Sep-2001
	STP4NC60	356Kb / 10P	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET Apr-2003
	STP4NC60A	338Kb / 10P	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET Jul-2001
	STP5NB100	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Feb-2000
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP5NB90	44Kb / 6P	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1998
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999

More results

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