P5NB40FP datasheet(1/7 Pages) STMICROELECTRONICS

tên linh kiện	P5NB40FP

Giải thích chi tiết về linh kiện	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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STP5NB40

STP5NB40FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.47

Ω

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

EXTREMELY HIGH dv/dt CAPABILITY

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family of

Power

MOSFETs

with

outstanding

performance.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

STP5NB40

STP5NB40FP

VDS

Drain-source Volt age (VGS =0)

400

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

400

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C4.7

3.1

A

ID

Drain Current (continuous) at Tc =100

oC3

2

A

IDM(

•)

Drain Current (pulsed)

19

A

Ptot

Tot al Dissipation at Tc =25

oC80

35

W

Derating F act or

0.64

0. 28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ ns

VISO

Insulat ion Withstand Volt age (DC)



2000

V

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

October 1997

1

2

3

TO-220

TO-220FP

1

2

3

TYPE

VDSS

RDS(on)

ID

STP5NB40

STP5NB40FP

400 V

<1.8

Ω

<1.8

Ω

4.7 A

3.1 A

1/7

Số phần tương tự - P5NB40FP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	P5NB100FP	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Feb-2000
	P5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	P5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999

More results

Mô tả tương tự - P5NB40FP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB11NB40	102Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
	STB19NB20	85Kb / 8P	N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET Jun-1998
	STB7NB40	61Kb / 6P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Oct-1997
	STD2NB60	291Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
	STP10NB20	122Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Nov-1997
	STP12NB30	56Kb / 6P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Jan-1998
	STP7NB40	73Kb / 4P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Jan-1998
	STP7NB60	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
	STU13NB60	61Kb / 6P	N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Oct-1997
	STU36NB20	57Kb / 6P	N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Jan-1998

More results

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