P5NB100FP datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	P5NB100FP

Giải thích chi tiết về linh kiện	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET

PDF	9 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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STP5NB100

STP5NB100FP

N - CHANNEL 1000V - 2.4

Ω - 5A - TO-220/TO-220FP

PowerMESH

™ MOSFET

ν

TYPICAL RDS(on) = 2.4

Ω

ν

EXTREMELY HIGH dv/dt CAPABILITY

ν

100% AVALANCHE TESTED

ν

VERY LOW INTRINSIC CAPACITANCES

ν

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

ν

HIGH CURRENT, HIGH SPEED SWITCHING

ν

SWITCH MODE POWER SUPPLIES (SMPS)

ν

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

February 2000

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Uni t

ST P5NB100

STP5NB100FP

VDS

Drain-source Voltage (VGS =0)

1000

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

1000

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC

5

5(*)

A

ID

Drain Current (continuous) at Tc =100

oC

3.1

3.1(*)

A

IDM(

•)

Drain Current (pulsed)

15.2

15. 2

A

Ptot

T otal Dissipat ion at Tc =25

oC

135

40

W

Derat ing Factor

1.08

0.32

W/

oC

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ ns

VISO

I nsulat ion W ithst and Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

T YPE

VDSS

RDS(on)

ID

STP5NB100

STP5NB100F P

1000 V

<2.7

Ω

<2.7

Ω

5A

1/9

Số phần tương tự - P5NB100FP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	P5NB40FP	71Kb / 7P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Oct-1997
	P5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	P5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999

More results

Mô tả tương tự - P5NB100FP

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP3NB100	44Kb / 6P	N - CHANNEL 1000V - 5.3 ohm - 3 A - TO-220/TO-220FP PowerMESH MOSFET Oct-1998
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET Oct-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET Apr-2003
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET Sep-2001
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP5NB90	44Kb / 6P	N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1998
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999

More results

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