STP4NB80 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	STP4NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET

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STP4NB80

STP4NB80FP

N - CHANNEL 800V - 3

Ω - 4A - TO-220/TO-220FP

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 3

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

September 2001

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP4NB80

STP4NB80FP

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

4

4(*)

A

ID

Drain Current (continuous) at Tc = 100

oC

2.4

2.4(*)

A

IDM(

•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at Tc = 25

o C

100

35

W

Derating Factor

0.8

0.28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)



2500

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

STP4NB80

STP4NB80FP

800 V

3.3

Ω

3.3

Ω

4 A

1/9

Số phần tương tự - STP4NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	STP4NB80	372Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STP4NB80FP	2Mb / 9P	Power MOSFET
Inchange Semiconductor ...	STP4NB80FP	319Kb / 2P	isc N-Channel MOSFET Transistor

More results

Mô tả tương tự - STP4NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB4NB80	52Kb / 6P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET Jun-1998
	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP3NC50	238Kb / 8P	N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh™ I MOSFET May-2001
	STP4NB100	109Kb / 9P	N - CHANNEL 1000V - 4ohm - 3.8A - TO-220/TO-220FP PowerMESH MOSFET Oct-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET Apr-2003
	STP4NK80Z	620Kb / 13P	N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET Feb-2003
	STP5NB100	106Kb / 9P	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Feb-2000
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999

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