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STP30N05 bảng dữ liệu(PDF) 1 Page - STMicroelectronics

tên linh kiện STP30N05
Giải thích chi tiết về linh kiện  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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STP30N05 bảng dữ liệu(HTML) 1 Page - STMicroelectronics

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STP30N05
STP30N05FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.045
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STP30N05
STP30N05FI
50 V
50 V
<0. 05
Ω
<0. 05
Ω
30 A
19 A
1
2
3
TO-220
ISOWATT220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP30N05
STP30N05FI
VDS
Drain-source Voltage (VGS =0)
50
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)50
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC30
19
A
ID
Drain Current (cont inuous) at T c =100
oC21
13
A
IDM(
•)
Drain Current (pulsed)
120
120
A
Ptot
Total Dissipation at Tc =25
oC
105
40
W
Derating Factor
0.7
0.27
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 175
oC
Tj
Max. Operat ing Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


Số phần tương tự - STP30N05

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Inchange Semiconductor ...		 STP30N05 ISC-STP30N05 Datasheet
371Kb / 2P		 isc N-Channel MOSFET Transistor
STP30N05FI ISC-STP30N05FI Datasheet
318Kb / 2P		 isc N-Channel MOSFET Transistor
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Mô tả tương tự - STP30N05

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
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77Kb / 5P		 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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198Kb / 10P		 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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