M48T58 datasheet(23/31 Pages) STMICROELECTRONICS

23 / 31 page

M48T58, M48T58Y

DC and AC parameters

23/31

Table 10.

Power down/up AC characteristics

Table 11.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where

noted).

Min

Max

Unit

tPD

E1 or W at VIH or E2 at VIL before Power Down

µs

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200µs after VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC Fall Time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC Fall Time

M48T58

µs

M48T58Y

µs

VPFD (min) to VPFD (max) VCC Rise Time

µs

tRB

VSS to VPFD (min) VCC Rise Time

µs

trec

VPFD (max) to Inputs Recognized

200

Symbol

Parameter(1)(2)

Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where

noted).

All voltages referenced to VSS.

Min

Typ

Max

Unit

VPFD

Power-fail Deselect Voltage

M48T58

4.5

4.6

4.75

M48T58Y

4.2

4.35

4.5

VSO

Battery Back-up Switchover Voltage

3.0

tDR

(3)

At 25°C, VCC = 0V.

Expected Data Retention Time

YEARS

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