T1035H6T datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

T1035H, T1050H

4/10

Figure 3.

RMS on-state current versus

ambient temperature (Epoxy

printed circuit board FR4,

copper thickness = 35 µm)

Figure 4.

Variation of thermal impedance

versus pulse duration

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

100

125

150

T(RMS) (A)

α=180 °

D²PAK

CU=1 cm²

Tamb(°C)

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

th(°C/W)

th(j-a)

th(j-c)

tP(s)

Figure 5.

On-state characteristics (maximum

values)

Figure 6.

Surge peak on-state current versus

number of cycles

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

ITM(A)

j=25 °C

j=150 °C

j max. :

t0 = 0.80 V

d = 34 mΩ

VTM(V)

100

110

100

1000

TSM(A)

Non repetitive

j initial=25 °C

Repetitive

c=125 °C

One cycle

t=20ms

Number of cycles

Figure 7.

Non-repetitive surge peak on-state

current for a sinusoidal pulse with

width tp < 10 ms and corresponding

value of I2t

Figure 8.

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

100

1000

10000

0.01

0.10

1.00

10.00

TSM(A), I²t (A²s)

Tj initial=25 °C

dI/dt limitation: 50 A/µs

TSM

I²t

tP(ms)

0.0

0.5

1.0

1.5

2.0

2.5

-40

-20

100

120

140

160

GT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

H & IL

Tj(°C)

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