STP3NB60 datasheet(1/6 Pages) STMICROELECTRONICS

tên linh kiện	STP3NB60

Giải thích chi tiết về linh kiện	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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STP12NB30

STP12NB30FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.34

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY(UPS)

s

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

January 1998

TO-220

TO-220FP

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

ST P12NB30

ST P12NB30FP

VDS

Drain-source Volt age (VGS =0)

300

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

300

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

o C12

6.5

A

ID

Drain Current (continuous) at Tc =100

oC7.5

4

A

IDM(

•)

Drain Current (pulsed)

48

A

Ptot

Tot al Dissipation at Tc =25

oC125

35

W

Derating F act or

1

0. 28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

5.5

V/ ns

VISO

Insulat ion Withstand Volt age (DC)



2000

V

Tstg

Storage T emperat ure

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

TYPE

VDSS

RDS(on)

ID

STP3NB60

STP12NB30F P

300 V

<0.40

Ω

<0.40

Ω

12A

6.5 A

1/6

Số phần tương tự - STP3NB60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP3NB60	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
VBsemi Electronics Co.,...	STP3NB60	1Mb / 9P	N-Channel 650 V (D-S) MOSFET
Inchange Semiconductor ...	STP3NB60	371Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STP3NB60FP	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
Inchange Semiconductor ...	STP3NB60FP	317Kb / 2P	isc N-Channel MOSFET Transistor

More results

Mô tả tương tự - STP3NB60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB11NB40	102Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
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	STP5NB40	71Kb / 7P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Oct-1997
	STP7NB40	73Kb / 4P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Jan-1998
	STP7NB60	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998
	STU13NB60	61Kb / 6P	N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Oct-1997
	STU36NB20	57Kb / 6P	N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Jan-1998

More results

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