STP10NB20 datasheet(3/9 Pages) STMICROELECTRONICS

tên linh kiện	STP10NB20

Giải thích chi tiết về linh kiện	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

PDF	9 Pages

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nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

Turn-on Time

Rise Time

VDD =100 V

ID =5 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =160 V

ID =10 A VGS =10 V

7.5

5.5

SWITCHING OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

tr(Voff)

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =160 V

ID =10 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

VSD (

∗)

Forward On Voltage

ISD =10 A

VGS =0

1.5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD =10 A

di/dt = 100 A/

µs

VDD =50 V

Tj =150

(see test circuit, figure 5)

170

980

11. 5

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

STP10NB20/FP

3/9

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