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STPIC6D595 bảng dữ liệu(PDF) 7 Page - STMicroelectronics

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STPIC6D595 bảng dữ liệu(HTML) 7 Page - STMicroelectronics

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Electrical characteristics
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3.2
Switching characteristics
Note:
1
All voltage value are with respect to GND
2
Each power DMOS source is internally connected to GND
3
Pulse duration
≤ 100µs and duty cycle ≤ 2%
4
Technique should limit TJ - TC to 10°C maximum
5
These parameters are measured with voltage sensing contacts separate from the current-
carrying contacts.
6
Nominal Current is defined for a consistent comparison between devices from different
sources. It is the current that produces a voltage drop of 0.5V at TC = 85°C.
Table 6. Switching characteristics (VCC = 5V, TC = 25°C, unless otherwise specified.)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
tPHL
Propagation delay time, high
to low level output from G
CL = 30pFID = 75mA
(See Figure 3,
Figure 4, Figure 5,
Figure 6,)
19
30
ns
tPLH
Propagation delay time, low
to high level output from G
46
70
ns
tPHL-SDO
Propagation delay time, Clock
to SDO
14
20
ns
tPLH-SDO
Propagation delay time, Clock
to SDO
14
20
ns
tPLH-R_O
Propagation delay low to high
level RCK to OUT
62
90
ns
tPHL-R_O
Propagation delay high to low
level RCK to OUT
13
18
ns
tPLH-S_SO
Propagation delay low to high
level SCK to SDO
14
20
ns
tPHL-S_SO
Propagation delay high to low
level SCK to SDO
14
20
ns
tr
Rise time, drain output
20
30
ns
tf
Fall time, drain output
15
20
ns



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