STL9NK30Z datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STL9NK30Z

2/8

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA

Note: 1. The value is rated according to Rthj-F.

2. When Mounted on FR-4 Board of 1inch2,2 oz Cu

3. Pulse width limited by safe operating area

4. ISD< 9A, di/dt<300A/µs, VDD<V(BR)DSS,TJ<TJMAX

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

300

VDGR

Drain-gate Voltage (RGS =20kΩ)

300

VGS

Gate- source Voltage

± 30

ID (2)

Drain Current (continuous) at TC = 25°C (Steady State)

Drain Current (continuous) at TC = 100°C

5.6

IDM (2)

Drain Current (pulsed)

PTOT (2)

Total Dissipation at TC = 25°C (Steady State)

2.5

PTOT (1)

Total Dissipation at TC = 25°C (Steady State)

Derating Factor (2)

0.6

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

3000

V/ns

dv/dt (4)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

–55 to 150

°C

Max. Operating Junction Temperature

Symbol

Parameter

Max.

Unit

Rthj-F

Thermal Resistance Junction-Foot (Drain)

1.6

°C/W

Rthj-amb (2)

Thermal Resistance Junction-ambient

°C/W

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

155

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

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