STD2NB80 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	STD2NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET

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STD2NB80

N - CHANNEL 800V - 4.6

Ω - 1.9A - IPAK/DPAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 4.6

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC1.9

A

ID

Drain Current (continuous) at Tc =100

oC1.2

A

IDM (

•)

Drain Current (pulsed)

7.6

A

Ptot

T otal Dissipation at Tc =25

oC55

W

Derating Factor

0.44

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST D2NB80

800 V

< 6.5

Ω

1.9 A

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

®

1/9

Số phần tương tự - STD2NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STD2NB25	274Kb / 9P	N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET Oct-1998
	STD2NB40	66Kb / 6P	N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET Jul-1999
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD2NB50-1	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD2NB60	291Kb / 9P	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET Mar-1998

More results

Mô tả tương tự - STD2NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STD1NB60	66Kb / 6P	N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK PowerMESH MOSFET Nov-1999
	STD1NB80-	56Kb / 5P	N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET Sep-1998
	STD1NB80	66Kb / 6P	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
	STD2NB25	274Kb / 9P	N - CHANNEL 250V - 1.7ohm - 2A - IPAK/DPAK PowerMESH MOSFET Oct-1998
	STD2NB40	66Kb / 6P	N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET Jul-1999
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET Sep-2001
	STD3NB50	75Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET May-1998
	STD4NB40	449Kb / 10P	N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH™ MOSFET Jun-2001
	STD7NB20	488Kb / 10P	N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH™ MOSFET Jul-2002
	STB11NB40-1	245Kb / 11P	N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET 14-Apr-2004

More results

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