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GF8NC60KD bảng dữ liệu(PDF) 5 Page - STMicroelectronics

tên linh kiện GF8NC60KD
Giải thích chi tiết về linh kiện  600 V - 8 A - short circuit rugged IGBT
PDF  18 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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GF8NC60KD bảng dữ liệu(HTML) 5 Page - STMicroelectronics

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Electrical characteristics
5/18
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 3 A,
RGE = 10 Ω, VGE =15 V
(see Figure 21)
33
72
82
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 3 A,
RGE=10 Ω, VGE =15 V,
TC = 125 °C
(see Figure 21)
60
106
136
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE=15 V
(see Figure 21)
55
85
140
µJ
µJ
µJ
Eon
(1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 3 A
RG= 10 Ω, VGE= 15 V,
TC = 125 °C
(see Figure 21)
87
162
249
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 3 A
IF = 3 A, TC = 125 °C
1.6
1.3
2.1
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 3 A, VR = 30 V,
di/dt = 100 A/
µs
(see Figure 22)
23.5
16.5
1.4
ns
nC
A
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
IF = 3 A,VR = 30 V,
TC =125 °C, di/dt = 100 A/µs
(see Figure 22)
39
39
2
ns
nC
A
Table 6.
Switching on/off (inductive load) (continued)



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