MMBR951 MRF957

2

MOTOROLA RF DEVICE DATA

MAXIMUM RATINGS0

Rating

Symbol

MMBR951LT1

MRF957T1

Unit

Collector–Emitter Voltage

VCEO

10

10

Vdc

Collector–Base Voltage

VCBO

20

20

Vdc

Emitter–Base Voltage

VEBO

1.5

15

Vdc

Power Dissipation (1) TC = 75°C

Derate linearly above Tcase = 75°C @

PD(max)

0.322

4.29

0.227

3.03

Watts

mW/

°C

Collector Current — Continuous (2)

IC

100

100

mA

Maximum Junction Temperature

TJmax

150

150

°C

Storage Temperature

Tstg

– 55 to +150

– 55 to +150

°C

Thermal Resistance, Junction to Case

R

θJC

233

330

°C/W

DEVICE MARKING

MMBR951LT1 = 7Z

MRF957T1 = B

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (3)

Collector–Emitter Breakdown Voltage

(IC = 0.1 mA, IB = 0)

V(BR)CEO

10

13

—

Vdc

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

V(BR)CBO

20

25

—

Vdc

Emitter Cutoff Current

(VEB = 1.0 V, IC = 0)

IEBO

—

—

0.1

µAdc

Collector Cutoff Current

(VCB = 10 V, IE = 0)

ICBO

—

—

0.1

µAdc

ON CHARACTERISTICS (3)

DC Current Gain

(VCE = 6.0 V, IC = 5.0 mA)

hFE

50

—

200

—

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Ccb

—

0.45

1.0

pF

Current Gain — Bandwidth Product

(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)

MMBR951LT1

MRF957T1

fT

—

—

8.0

9.0

—

—

GHz

NOTES:

1. To calculate the junction temperature use TJ = (PD x R

θJA) + TCASE. Case temperature measured on collector lead immediately adjacent

to body of package.

2. IC — Continuous (MTBF ≈ 10 years).

3. Pulse width

≤ 300 µs, duty cycle ≤ 2% pulsed.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com