STB60N03L-10 datasheet(1/6 Pages) STMICROELECTRONICS

tên linh kiện	STB60N03L-10

Giải thích chi tiết về linh kiện	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STB60N03L-10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

PRELIMIRARY DATA

s

TYPICAL RDS(on) = 0.0085

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

s

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX "-1")

s

SURFACE-MOUNTING D2PACK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)30

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

oC60

A

ID

Drain Current (continuous) at Tc = 100

o C42

A

IDM(

•)

Drain Current (pulsed)

240

A

Ptot

Total Dissipation at Tc = 25

o C

150

W

Derating Factor

1

W/

oC

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

March 1996

TYPE

VDSS

RDS(on)

ID

STB60N03L-10

30 V

< 0.01

Ω

60 A

1

2

3

1

3

I2PAK

TO-262

D2PAK

TO-263

1/6

Số phần tương tự - STB60N03L-10

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
VBsemi Electronics Co.,...	STB60N03L-10	1Mb / 10P	N-Channel 30 V (D-S) 175 째C MOSFET

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