STB5NB60 datasheet(1/9 Pages) STMICROELECTRONICS

tên linh kiện	STB5NB60

Giải thích chi tiết về linh kiện	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET

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STB5NB60

N - CHANNEL 600V - 1.8

Ω -5A- I2PAK/D2PAK

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 1.8

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced family

of

power MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

January 2000

1 2

3

I

2PAK

TO-262

(suffix ”-1”)

TYPE

VDSS

RDS(on)

ID

ST B5NB60

600 V

< 2.0

Ω

5A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

600

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC5

A

ID

Drain Current (continuous) at Tc =100

oC3.1

A

IDM (

•)

Drain Current (pulsed)

20

A

Ptot

T otal Dissipation at Tc =25

oC100

W

Derating Factor

0.8

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

4.5

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

1

3

D

2PAK

TO-263

(Suffix ”T4”)

1/9

Số phần tương tự - STB5NB60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB5NB80	87Kb / 8P	N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET Mar-1999

More results

Mô tả tương tự - STB5NB60

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB10NC50-1	55Kb / 7P	N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET Dec-1999
	STB3NB60	90Kb / 9P	N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET Jun-1998
	STB4NC60	429Kb / 9P	N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh™ I MOSFET Oct-2001
	STB5NB80	87Kb / 8P	N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET Mar-1999
	STB7NB60	99Kb / 9P	N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH MOSFET Jun-1998
	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET Jan-2000
	STB9NC60	461Kb / 10P	N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™ I MOSFET Feb-2002
	STP4NC60	356Kb / 10P	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET Apr-2003
	STP4NC60A	338Kb / 10P	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™ I MOSFET Jul-2001
	STP5NB60	108Kb / 9P	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Sep-1999

More results

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