STB4NB80 datasheet(1/6 Pages) STMICROELECTRONICS

tên linh kiện	STB4NB80

Giải thích chi tiết về linh kiện	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

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STB4NB80

N - CHANNEL 800V - 3

Ω - 4A - TO-220/TO-220FP

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 3

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

June 1998

1

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STB4NB80

STB4NB80FP

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

o C

4

4(*)

A

ID

Drain Current (continuous) at Tc = 100

oC

2.4

2.4(*)

A

IDM(

•)

Drain Current (pulsed)

16

A

Ptot

Total Dissipation at Tc = 25

oC100

35

W

Derating Factor

1

0.28

W/

oC

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)



2000

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*) Limited only by maximum temperature allowed

TYPE

VDSS

RDS(on)

ID

STB4NB80

STB4NB80FP

800 V

3.3

Ω

3.3

Ω

4 A

I

2PAK

TO-262

(Suffix "-1")

D

2PAK

TO-263

(Suffix "T4")

1/6

Số phần tương tự - STB4NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB4NB50	64Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET Oct-1998

More results

Mô tả tương tự - STB4NB80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP3NB80	106Kb / 9P	N - CHANNEL 800V - 4.6ohm - 2.6A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP4NB30FP	331Kb / 9P	N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET May-2001
	STP4NB80	354Kb / 9P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET Sep-2001
	STP4NC50	107Kb / 9P	N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET May-2000
	STP4NK80Z	620Kb / 13P	N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET Feb-2003
	STP5NB80	107Kb / 9P	N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET Jan-1999
	STP5NK80ZFP	378Kb / 10P	N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH™ Power MOSFET Jul-2002
	STP6NB80	44Kb / 6P	N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP Sep-1998
	STP7NB80	106Kb / 9P	N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET Apr-1999
	STP9NK80Z	336Kb / 11P	N-CHANNEL 800V -0.9ohm - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET 18-May-2005

More results

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