STB4NB50 datasheet(1/6 Pages) STMICROELECTRONICS

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Giải thích chi tiết về linh kiện	N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET

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STB4NB50

N - CHANNEL 500V - 2.5

Ω - 3.8A - D2PAK/I2PAK

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 2.5

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

October 1998

TYPE

VDSS

RDS(on)

ID

STB4NB50

500 V

< 2.8

Ω

3.8 A

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

500

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

3.8

A

ID

Drain Current (continuous) at Tc = 100

oC

2.4

A

IDM(

•)

Drain Current (pulsed)

15.2

A

Ptot

Total Dissipation at Tc = 25

o C80

W

Derating Factor

0.64

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1

2

3

I

2PAK

TO-262

(suffix "-1")

1

3

D

2PAK

TO-263

(Suffix "T4")

1/8

Số phần tương tự - STB4NB50

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB4NB80	52Kb / 6P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET Jun-1998
STMicroelectronics	STB4NB80FP	52Kb / 6P	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET Jun-1998

More results

Mô tả tương tự - STB4NB50

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB10NC50-1	55Kb / 7P	N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK PowerMESH] MOSFET Dec-1999
	STB6NB50	92Kb / 9P	N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET Nov-1999
	STB6NB90	48Kb / 5P	N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET Feb-1999
	STD3NB50	75Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET May-1998
	STP20NM50	532Kb / 16P	N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET 05-Sep-2005
	STP22NM50	356Kb / 10P	N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET Jan-2003
	STP4NB50	163Kb / 7P	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET Apr-2003
	STP5NC50	534Kb / 12P	N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™ I MOSFET Dec-2002
	STB20NM50	317Kb / 14P	N-channel 500V - 0.20Ω - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET 26-Jan-2007
	STB9NK50ZT4	371Kb / 13P	N-CHANNEL 500V - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET Jun-2004

More results

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