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EMC646SP16K bảng dữ liệu(PDF) 49 Page - Emerging Memory & Logic Solutions Inc

tên linh kiện EMC646SP16K
Giải thích chi tiết về linh kiện  4Mx16 bit CellularRAM AD-MUX
PDF  52 Pages
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nhà sản xuất  EMLSI [Emerging Memory & Logic Solutions Inc]
Trang chủ  http://www.emlsi.com
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EMC646SP16K
4Mx16 CellularRAM AD-MUX
49
Preliminary
Figure 36: Asynchronous WRITE Followed by Burst READ
Note:
1. Nondefault BCR settings for asynchronous WRITE, with ADV# LOW, followed by burst READ: fixed or variable latency, latency code 2 (3 clocks),
WAIT active LOW, WAIT asserted during delay.
2. When the divice is transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay LOW when the
device is transitioning to fixed-latency burst READs. A refresh opportunity must be provided every tCEM. A refresh opportunity is satisfied by
either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
CLK
ADV#
CE#
OE#
WAIT
A/DQ[15:0]
A[21:16]
UB#/LB#
VIH
VIL
WE#
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
Note 2
Valid Address
Valid
Output
Valid
Output
Valid
Output
Valid
Output
tCBPH
tOHZ
tBOE
tACLK
tKOH
Valid Address
Data
tCLK
tSP
tHD
tSP
tHD
tAVS
tVP
tCW
tCSP
tWC
tBW
tSP
tSP tHD
tAS
tWP
tDW
tAVH
Valid Address
tAS
tAVS
tDH
tAVH
Valid Address
tSP
tHD
VOH
VOL
High-Z
tKHTL
tHD
Don’t Care
Undefined



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