RT2P09M datasheet(2/3 Pages) ISAHAYA

tên linh kiện	RT2P09M

Giải thích chi tiết về linh kiện	COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

PDF	3 Pages

Scroll/Zoom	100%

nhà sản xuất	ISAHAYA [Isahaya Electronics Corporation]

Trang chủ	http://www.idc-com.co.jp

Logo

2 / 3 page

RT2P09M

COMPOSITE TRANSISTOR WITH RESISTOR

FOR SWITCHING APPLICATION

SILICON PNP EPITAXIAL TYPE

ELECTRICAL CHARACTERISTICS （Ta=25℃）

（RTr1、RTr2）

Limits

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)CBO

Collector to Emitter break down voltage

I C=-100μA，RBE=∞

-50

ICBO

Collector cut off current

VCB=-50V，I E =0

-0.1

μA

hFE

DC forward current gain

VCE=-5V，I C=-10mA

VCE(sat)

Collector to Emitter saturation voltage

I C=-10mA，I B=-0.5mA

-0.1

-0.3

VI(ON)

Input on voltage

VCE=-0.2V，I C=-5mA

-0.7

-1.1

VI(OFF)

Input off voltage

VCE=-5V，I C=-100μA

-0.5

-0.6

Input resistor

1.5

2.2

2.9

KΩ

R2/R1

Resistor ratio

Gain band width product

VCE=-6V，I E=10mA

150

MHz

TYPICAL CHARACTERISTICS （Tr1、Tr2）

ISAHAYA ELECTRONICS CORPORATION

COLLECTOR CURRENT

VS.INPUT OFF VOLTAGE

-10

-100

-1000

-2

-1.6

-1.2

-0.8

-0.4

INPUT OFF VOLTAGE ＶＩ（ＯＦＦ）（Ｖ）

VCE=-5V

INPUT ON VOLTAGE

VS.COLLECTOR CURRENT

-0.1

-1

-10

-1

-10

-100

COLLECTOR CURRENT ＩＣ（ｍＡ）

VCE=-0.2V

DC FORWARD CURRENT GAIN

VS.COLLECTOR CURRENT

100

1000

-1

-10

-100

COLLECTOR CURRENT Ｉ

Ｃ（

ｍＡ）

VCE=-5V

RT2P09M bảng dữ liệu(PDF) 2 Page - Isahaya Electronics Corporation

RT2P09M bảng dữ liệu(HTML) 2 Page - Isahaya Electronics Corporation

Html Pages

1 2 3

bảng dữ liệu tải về

Link URL