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SCN2C60 bảng dữ liệu(PDF) 1 Page - SemiWell Semiconductor

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Giải thích chi tiết về linh kiện  Sensitive Gate Silicon Controlled Rectifiers
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SCN2C60 bảng dữ liệu(HTML) 1 Page - SemiWell Semiconductor

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Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(AV)
Average On-State Current
Half Sine Wave : TC = 45 °C
1.0
A
IT(RMS)
R.M.S On-State Current
All Conduction Angle
1.5
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
15
A
I2t
I2t for Fusing
t = 8.3ms
0.9
A2s
PGM
Forward Peak Gate Power Dissipation
TA=25°C, Pulse Width ≤ 1.0㎲
2W
PG(AV)
Forward Average Gate Power Dissipation
TA=25°C, t = 8.3ms
0.1
W
IFGM
Forward Peak Gate Current
1
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
SCN2C60
Oct, 2002. Rev. 2
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( IT(RMS)= 1.5 A )
◆
Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
2. Gate
1. Cathode
Symbol
○
○
1/5
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
TO-92
○
3. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.


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