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EM644FS8BV-10LL bảng dữ liệu(PDF) 8 Page - Emerging Memory & Logic Solutions Inc |
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EM644FS8BV-10LL bảng dữ liệu(HTML) 8 Page - Emerging Memory & Logic Solutions Inc |
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8 / 11 page ![]() EM620FU16B Series Low Power, 128Kx16 SRAM 8 tWC Address CS1 UB,LB WE Data in Data out tCW1,2(2) tWR(4) tAW tBW tWP(1) tDW tDH TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 CONTROLLED) High-Z High-Z Data Valid tAS(3) NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS1, a high CS2 and low WE. A write begins at the latest transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition among CS1 goes low, CS2 goes high and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the CS1 going low CS2 going high to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE going high or CS2 going low. CS2 tAS(3) |
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