EM620FV8AS datasheet(4/11 Pages) EMLSI

4 / 11 page

EM620FV8AS Series

Low Power, 256Kx8 SRAM

merging Memory & Logic Solutions Inc.

Rev 0.2

DC AND OPERATING CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Input leakage current

ILI

V IN=V SS to VCC

-1

µA

Output leakage current

ILO

CS1=VIH, CS2=VIL or OE=V IH or WE=VIL, VIO=VSS to VCC

-1

µA

Operating power supply

ICC

I IO=0mA, CS 1=V IL, CS 2=WE =VIH, VIN=VIH or VIL

Average operating current

ICC1

Cycle time=1

µs, 100% duty, I

IO=0mA,

CS1< 0.2V, CS2>VCC -0.2V,

V IN<0.2V or VIN>VCC-0.2V

ICC2

Cycle time = Min, IIO=0mA, 100% duty,

CS1=V IL, CS2=V IH, VIN=V IL or VIH

55ns

70ns

Output low voltage

VOL

I OL = 2.1mA

0.4

Output high voltage

VOH

I OH = -1.0mA

2.4

Standby Current (TTL)

ISB

CS1=VIH, CS2=VIL, Other inputs=V IH or VIL

0.3

Standby Current (CMOS)

ISB1

CS1>VCC-0.2V, CS 2>V CC-0.2V (CS 1 controlled)

or 0V<CS2<0.2V (CS2 controlled),

Other inputs=0~VCC

(Max. condition : VCC=3.6V @ 85

oC)

µA

RECOMMENDED DC OPERATING CONDITIONS 1)

1. TA= -40 to 85oC, otherwise specified

2. Overshoot: VCC +2.0 V in case of pulse width < 20ns

3. Undershoot: -2.0 V in case of pulse width < 20ns

4. Overshoot and undershoot are sampled, not 100% tested

Parameter

Symbol

Min

Typ

Max

Unit

Supply voltage

VCC

2.7

3.3

3.6

Ground

VSS

Input high voltage

VIH

2.2

VCC + 0.2

Input low voltage

-0.23)

0.6

CAPACITANCE1) (f =1MHz, TA=25

oC)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

IN=0V

Input/Ouput capacitance

IO =0V

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