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ST662ABN bảng dữ liệu(PDF) 6 Page - STMicroelectronics

tên linh kiện ST662ABN
Giải thích chi tiết về linh kiện  DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
PDF  12 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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ST662ABN bảng dữ liệu(HTML) 6 Page - STMicroelectronics

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APPLICATION CIRCUIT
Based on fast charge/discharge of capacitors,
this circuit involves high di/dt values limited only
by Ron of switches. This implies a critical layout
design due to the need to minimize inductive
paths and place capacitors as close as possible
to the device.
A good layout design is strongly recommended
for noise reason. For best performance, use very
short connections to the capacitors and the
values shown in table 1.
C3 and C4 must have low ESR in order to
minimize the output ripple. Their values can be
reduced to 2
µF and 1µF, respectively, when
using ceramic capacitors, but must be of 10
µFor
larger if aluminium electrolytic are chosen.
C5 must be placed as close to the device as
possible and could be omitted if very low output
noise performance are not required.
Fig
4
and
Fig
5
show,
respectively, our
EVALUATION
kit
layout
and
the
relatively
electrical shematic.
Table 1: List of Components
CAPACITOR
TYPE
VALUE (
µF)
Charge Pump C1
Ceramic
0.22
Charge Pump C2
Ceramic
0.22
Input C3
Electrolyt ic Tant alum
4. 7
O utput C4
Electrolyt ic Tant alum
4. 7
Decoupling C5
Ceramic
0. 1
Figure 5: Electrical Schematic
Figure 4: KIT Lay-out
ST662A
6/12



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