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EM682FR16AS-85L bảng dữ liệu(PDF) 6 Page - Emerging Memory & Logic Solutions Inc

tên linh kiện EM682FR16AS-85L
Giải thích chi tiết về linh kiện  128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
PDF  11 Pages
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nhà sản xuất  EMLSI [Emerging Memory & Logic Solutions Inc]
Trang chủ  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM682FR16AS-85L bảng dữ liệu(HTML) 6 Page - Emerging Memory & Logic Solutions Inc

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EM620FV16B Series
Low Power, 128Kx16 SRAM
6
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL1) = 100pF + 1 TTL
CL1) = 30pF + 1 TTL (only 45ns part)
1. Including scope and Jig capacitance
2. R1=3070 ohm,
R2=3150 ohm
3. VTM=2.8V
CL1)
VTM3)
R12)
R22)
Parameter
Symbol
45ns
55ns
70ns
Unit
Min
Max
Min
Max
Min
Max
Read cycle time
tRC
45
-
55
-
70
-
ns
Address access time
tAA
-
45
-
55
-
70
ns
Chip select to output
tCO1, tCO2
-
45
-
55
-
70
ns
Output enable to valid output
tOE
-
25
-
25
-
35
ns
UB, LB access time
tBA
45
55
70
ns
Chip select to low-Z output
tLZ1, tLZ2
10
-
10
-
10
-
ns
UB, LB enable to low-Z output
tBLZ
5
-
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
tHZ1, tHZ2
0
20
0
20
0
25
ns
UB, LB disable to high-Z output
tBHZ
0
15
0
20
0
25
ns
Output disable to high-Z output
tOHZ
0
15
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
10
-
ns
Parameter
Symbol
45ns
55ns
70ns
Unit
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
45
-
55
-
70
-
ns
Chip select to end of write
tCW1, tCW2
45
-
45
-
60
-
ns
Address setup time
tAS
0
-
0
-
0
-
ns
Address valid to end of write
tAW
45
-
45
-
60
-
ns
UB, LB valid to end of write
tBW
45
-
45
-
60
-
ns
Write pulse width
tWP
35
-
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
0
-
ns
Write to ouput high-Z
tWHZ
0
15
0
20
0
20
ns
Data to write time overlap
tDW
25
25
30
ns
Data hold from write time
tDH
0
-
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
5
-
ns
READ CYCLE (Vcc =3.0 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
WRITE CYCLE (Vcc =3.0 to 3.6V, Gnd = 0V, TA = -40oC to +85oC)



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