2STR1160 datasheet(4/11 Pages) STMICROELECTRONICS

tên linh kiện	2STR1160

Giải thích chi tiết về linh kiện	Low voltage fast-switching NPN power transistor

PDF	11 Pages

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Electrical characteristics

2STR1160

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = 60 V

0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = 5 V

0.1

µA

V(BR)CBO

Collector-base

breakdown voltage

(IE = 0)

IC = 100 µA

V(BR)CEO

(1)

Pulsed duration = 300

µs, duty cycle ≤1.5%

Collector-emitter

breakdown voltage

(IB = 0)

IC = 10 mA

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 100 µA

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 0.5 A

IB = 50 mA

IC = 1 A

IB = 100 mA

130

210

430

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 1 A

IB = 100 mA

0.9

1.25

hFE

(1)

DC current gain

IC = 0.5 A

VCE = 2V

IC = 1 A

VCE = 2V

IC = 2 A

VCE = 2V

180

250

130

560

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = 1.5 A

VCC = 10 V

IB1 = -IB2 = 150 mA

VBB(off)= -5 V

220

500

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