Nexperia

PSC1065H

650 V, 10 A SiC Schottky diode in DPAK R2P

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDC

DC blocking voltage

650

-

-

V

IF = 10 A; Tj = 25 °C

-

1.5

1.8

V

VF

forward voltage

IF = 10 A; Tj = 150 °C

-

1.95

2.6

V

VR = 650 V; Tj = 25 °C

-

1

60

µA

IR

reverse current

VR = 650 V; Tj = 150 °C

-

10

120

µA

VR = 1 V; f = 1 MHz; Tj = 25 °C

-

340

-

pF

Cd

diode capacitance

VR = 400 V; f = 1 MHz; Tj = 25 °C

-

36

-

pF

QC

total capacitive charge VR = 400 V; dIF/dt = 200 A/µs; IF = 10 A;

Tj = 25 °C

-

22

-

nC

VF (V)

0

4

3

1

2

aaa-036110

8

12

4

16

20

IF

(A)

0

(6)

(4)

(5)

(3) (2) (1)

Pulsed condition:

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 100 °C

(5) Tj = 25 °C

(6) Tj = -55 °C

Fig. 4. Forward current as a function of forward

voltage; typical values

VF (V)

0

8

6

2

4

aaa-036111

40

60

20

80

100

IF

(A)

0

(1)

(3)

(2)

(4)

(5)

(6)

Pulsed condition:

(1) Tj = 175 °C

(2) Tj = 150 °C

(3) Tj = 125 °C

(4) Tj = 100 °C

(5) Tj = 25 °C

(6) Tj = -55 °C

Fig. 5. Forward characteristics in surge current as a

function of forward voltage; typical values

PSC1065H

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Product data sheet

8 February 2024

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