Nexperia

PRTR5V0U2X

Ultra low capacitance double rail-to-rail ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

-

0.7

-

V

VBR

breakdown voltage

Tamb = 25 °C

[1]

6

-

9

V

IR

reverse current

VR = 3 V; Tamb = 25 °C

[2]

-

< 1

100

nA

C(I/O-GND)

input/output to ground

capacitance

f = 1 MHz; V(I/O-GND) = 0 V; Tamb = 25 °C [3]

-

1

1.5

pF

C(I/O-I/O)

input/output to input/

output capacitance

f = 1 MHz; V(I/O-I/O) = 0 V; Tamb = 25 °C [4]

-

0.6

-

pF

Csup

supply pin to ground

capacitance

f = 1 MHz; Vcc = 0 V; Tamb = 25 °C

[1]

-

16

-

pF

IPPM = 2.5 A; 8/20 µs; Tamb = 25 °C

[5]

-

17

-

V

VCL

clamping voltage

IPPM = -2.2 A; 8/20 µs; Tamb = 25 °C

[5]

-

-4

-

V

[1] Measured from pin 4 to ground.

[2] Measured from pin 2, 3 and 4 to ground.

[3] Measured from pin 2 and 3 to ground.

[4] Measured from pin 2 to pin 3.

[5] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

V(I/O-GND) (V)

0

5

4

2

3

1

006aaa483

0.8

1.2

0.4

1.6

2.0

C(I/O-GND)

(pF)

0

f = 1 MHz; Tamb = 25 °C

Fig. 2. Input/output to ground capacitance as a

function of input/output to ground voltage;

typical values

V(I/O-I/O) (V)

0

5

4

2

3

1

006aaa484

0.4

0.6

0.2

0.8

1.0

C(I/O-I/O)

(pF)

0

f = 1 MHz; Tamb = 25 °C

Fig. 3. Input/output to input/output capacitance as a

function of input/output to input/output voltage;

typical values

PRTR5V0U2X

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Nexperia B.V. 2021. All rights reserved

Product data sheet

28 July 2021

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