CHA5294

30-40GHz Medium Power Amplifier

Ref. : DSCHA52946237 - 25 Aug 06

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics on wafer

Tamb = +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

30

40

GHz

G

Small signal gain (1)

24

dB

∆G

Small signal gain flatness (1)

±1.5

dB

Is

Reverse isolation

40

dB

P1dB

Pulsed output power at 1dB compression (1)

24

dBm

P03

Output power at 3dB gain compression (1)

25

dBm

IP3

Output Intercept point 3rd order

32

dBm

VSWRin

Input VSWR (1)

2.0:1

VSWRout

Output VSWR(1)

4.0:1

Vd

Drain bias DC voltage

4

V

Id

Bias current @ small signal

500

650

mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum Drain bias voltage with Pin max=0dBm

+4.5

V

Id

Drain bias current with Vd=4V

750

mA

Vg

Gate bias voltage

-2 to +0.4

V

Vdg

Maximum drain to gate voltage (Vd - Vg)

+6.0

V

Pin

Maximum input power overdrive (2)

+3.0

dBm

Tch

Maximum channel temperature

+175

°C

Ta

Operating temperature range

-40 to +80

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.