EM681FV16AU Series
Low Power, 512Kx16 SRAM
4
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
-1
-
1
uA
Operating power supply
ICC
IIO=0mA, CS=VIL, WE=VIH, VIN=VIH or VIL
--
2
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, I
IO=0mA,
CS<0.2V, LB<0.2V or/and UB<0.2V,
VIN<0.2V or VIN>VCC-0.2V
--
4
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
45ns
55ns
70ns
--
45
35
25
mA
Output low voltage
VOL
IOL = 2.1mA
--
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.2
-
-
V
Standby Current (TTL)
ISB
CS=VIH, Other inputs=VIH or VIL
--
0.5
mA
Standby Current (CMOS)
ISB1
CS>VCC-0.2V
Other inputs=0 ~ VCC
(Typ. condition : VCC=3.3V @ 25
oC)
(Max. condition : VCC=3.6V @ 85
oC)
LF
-
2
15
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -40 to 85
oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.3
3.6
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
2.2
-
VCC + 0.2
2)
V
Input low voltage
VIL
-0.23)
-
0.6
V
CAPACITANCE1) (f =1MHz, TA=25
oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
10
pF
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