SD1660 datasheet(1/7 Pages) STMICROELECTRONICS

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800/900 MHz APPLICATIONS

RF & MICROWAVE TRANSISTORS

2 x . 437 x .450 2LFL (M175)

epoxy sealed

.

860 - 900 MHz

.

24 VOLTS

.

CLASS AB PUSH PULL

.

INTERNAL INPUT MATCHING

.

DESIGNED FOR HIGH POWER LINEAR

OPERATION

.

HIGH SATURATED POWER CAPABILITY

.

GOLD METALLIZATION FOR HIGH

RELIABILITY

.

DIFFUSED EMITTER BALLAST

RESISTORS

.

COMMON EMITTER CONFIGURATION

.

POUT

= 120 W MIN. WITH 6.0 dB GAIN

DESCRIPTION

The SD1660 is a gold metallized epitaxial silicon

NPN planar transistor using diffused emitter ballast

resistors for high linearity Class AB operation in

cellular base station applications.

PIN CONNECTION

BRANDING

SD1660

ORDER CODE

SD1660

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

3.0

V

IC

Device Current

25

A

PDISS

Power Dissipation

310

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

− 55 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

0.55

°C/W

SD1660

1. Collector

3. Emitter

2. Base

THERMAL DATA

November 1992

1/7

Số phần tương tự - SD1660

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