SD1538-08 datasheet(1/5 Pages) STMICROELECTRONICS

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AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

. 400 x .400 2LFL (M138)

hermetically sealed

.

DESIGNED FOR HIGH POWER PULSE

IFF, DME, AND TACAN APPLICATIONS

.

200 W (typ.) IFF 1030 - 1090 MHz

.

150W (min.) DME 1025- 1150MHz

.

140 W (typ.) TACAN 960 - 1215 MHz

.

7.8 dB MIN. GAIN

.

REFRACTORY GOLD METALLIZATION

.

BALLASTING AND LOW THERMAL

RESISTANCE FOR RELIABILITY AND

RUGGEDNESS

.

30:1 LOAD VSWR CAPABILITY AT

SPECIFIED OPERATING CONDITIONS

.

INPUT AND OUTPUT MATCHED,

COMMON BASE CONFIGURATION

DESCRIPTION

The SD1538-08 is a gold metallized, silicon NPN

power transistor. The SD1538-08 is designed for

applications requiring high peak power and low

duty cycles such as IFF, DME and TACAN. The

SD1538-08 is packaged in a metal/ceramic pack-

age with internal input/output matching, resulting

in improved broadband performance and low ther-

mal resistance.

PIN CONNECTION

BRANDING

1538-8

ORDER CODE

SD1538-08

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

VCBO

Collector-Base Voltage

65

V

VCES

Collector-Emitter Voltage

65

V

VEBO

Emitter-Base Voltage

3.5

V

IC

Device Current

11

A

PDISS

Power Dissipation

583

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

− 65 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

0.30

°C/W

SD1538-08

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

September 6, 1994

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