Silicon NPN Power Transistor

BFR35AP

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1uA, IB= 0

20

--

--

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA, IB= 0

12

--

--

V

ICBO

Collector Cutoff Current

VCB= 10V,IE=0

--

--

0.1

uA

IEBO

Emitter Cutoff Current

VEB=1V,IC=0

--

--

0.1

uA

hFE

DC Current Gain

IC= 20mA, VCE= 10V

120

--

180

--

fT

Transition Frequency

VCE=10V,IC=20mA

--

7

--

GHz

Cre

feedback capacitance

VCB=10V,IE=0,f=1MHz

--

0.65

--

pF

|S21e|2

Power Gain

VCE=10V,IC=20mA,f=1GHz

--

11.5

--

dB

NF

Noise Figure

VCE=10V,IC=7mA,f=1GHz

--

1.3

--

dB

PACKAGE OUTLINE (UNIT: MM):

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for