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PD57006 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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PD57006 bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() 1/14 March, 21 2003 PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57006 is a common source N-Channel, en- hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS tech- nology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57006’s su- perior linearity performance makes it an ideal so- lution for car mobile radio. The PowerSO-10 plastic package, designed to of- fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (formed lead) ORDER CODE PD57006 BRANDING PD57006 PowerSO-10RF (straight lead) ORDER CODE PD57006S BRANDING PD57006S ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ± 20 V ID Drain Current 1 A PDISS Power Dissipation (@ Tc = 70°C) 20 W Tj Max. Operating Junction Temperature 165 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 5 °C/W Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) |
Số phần tương tự - PD57006 |
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Mô tả tương tự - PD57006 |
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