XPD54003 datasheet(1/10 Pages) STMICROELECTRONICS

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PRELIMINARY DATA

May 2000

PD54003 - PD54003S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD5400 is a common source N-Channel, en-

hancement-mode, lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 7V in common source mode at frequencies of

up to 1GHz. PD54003 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD54003’s su-

perior linearity performance makes it an ideal so-

lution for portable radio.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(Formed Lead)

ORDER CODE

BRANDING

XPD54003

PowerSO-10RF

(Straight Lead)

ORDER CODE

BRANDING

PD54003

PD54003S

XPD54003S

ABSOLUTE MAXIMUM RATINGS(TCASE =25 OC)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain Source Voltage

25

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

4

A

PDISS

Power Dissipation (@ Tc = 70 0C)

52.8

W

Tj

Max. Operating Junction Temperature

165

0

C

TSTG

Storage Temperature

-65 to 165

0

C

THERMAL DATA

Rth(j-c)

Junction-Case Thermal Resistance

1.8

0C/W

Số phần tương tự - XPD54003

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Mô tả tương tự - XPD54003

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