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Document Number 86085

Rev. 1.3, 11-Aug-04

VISHAY

G2A / B / D / G / J / K / M

Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified

1) Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

(JEDEC Method)

IFSM

50

A

Maximum full load reverse

current

full cycle average 0.375 "

(9.5 mm) lead length at

Tamb = 100 °C

IR(AV)

100

µA

Operating junction and storage

temperature range

TJ, TSTG

- 55 to + 175

°C

Parameter

Test condition

Symbol

Value

Unit

Typical thermal resistance 1)

RθJA

55

K/W

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Maximum instantaneous

forward voltage

IF = 2 A

G2A

VF

1.2

V

G2B

VF

1.2

V

G2D

VF

1.1

V

G2G

VF

1.1

V

G2J

VF

1.1

V

G2K

VF

1.1

V

G2M

VF

1.1

V

Maximum reverse current

VR = VRRM, Tamb = 25 °C

IR

1.0

µA

VR = VRRM, Tamb = 150 °C

IR

100

µA

Typical reverse recovery time

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

trr

1.5

µs

Typical junction capacitance

VR = 4.0 V, f = 1 MHz

Cj

15

pF

Parameter

Test condition

Part

Symbol

Value

Unit

Figure 1. Forward Current Derating Curve

0

2.0

1.0

1.5

25

0

50

75

100

125

150

175

Ambient T emperature (°C)

0.5

60HZ Resistive or

Inductive Load

10

20

Capacitance Load

Inductive Load

Ipk/IAV = 5.0

0.375 (9.5mm)

Lead Length

gg2a_01

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

0

20

10

30

40

50

1

100

10

Number of Cycles at 60 HZ

TJ =TJ max.

8.3ms Single Half Sine-W ave

(JEDEC Method)

gg2a_02