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MMBT5401 bảng dữ liệu(PDF) 1 Page - Lite-On Technology Corporation

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MMBT5401
PNP General Purpose Transistor
FEATURES
• Ideal for Medium Power Amplification and
Switching
• Complementary PNP Type available(MMBT5551)
MECHANICAL DATA
• Case: SOT-23 Plastic
• Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-600
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-100µA,IE=0
VCBO
-160
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-150
V
Emitter-base breakdown voltage
IE=-10µA,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-120V,IE=0
ICBO
-0.1
uA
Emitter-base cut-off current
VEB=-4V,IC=0
IEBO
-0.1
uA
VCE=-5V,IC=-1mA
hFE1
80
VCE=-5V,IC=-10mA
hFE2
100
300
DC current gain
VCE=-5V,IC=-50mA
hFE3
50
Collector-emitter saturation voltage
IC=-50mA,IB=-5mA
VCE(sat)
-0.5
V
Base-emitter saturation voltage
IC=-50mA,IB=-5mA
VBE(sat)
-1
V
Transition frequency
VCE=-5V,IC=-10mA,
f=30MHz
fT
100
MHz
REV. 2, Jun-2012, KSPR15


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