MSC81250M datasheet(1/5 Pages) STMICROELECTRONICS

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October 1992

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2NLFL (S042)

hermetically sealed

.

REFRACTORY\GOLD METALLIZATION

.

RUGGEDIZED VSWR 20:1

.

INTERNAL INPUT/OUTPUT MATCHING

.

LOW THERMAL RESISTANCE

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 250 W MIN. WITH 6.2 dB GAIN

DESCRIPTION

The MSC81250M device is a high power pulsed

transistor specifically designed for DME/TACAN

avionics applications.

This device is capable of withstanding a minimum

20:1 load VSWR at any phase angle under full

rated conditions. Low RF thermal resistance and

semi automatic wire bonding techniques ensure

high reliability and product consistency.

The

MSC81250M

is

housed

in

the

unique

AMPAC

™ package with internal input/output

matching structures.

PIN CONNECTION

BRANDING

81250M

ORDER CODE

MSC81250M

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 80°C)

600

W

IC

Device Current*

17.8

A

VCC

Collector-Supply Voltage*

55

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.20

°C/W

*Applies only to rated RF amplifier operation

MSC81250M

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5

Số phần tương tự - MSC81250M

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Advanced Semiconductor	MSC81250M	39Kb / 1P	NPN SILICON RF POWER TRANSISTOR

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Mô tả tương tự - MSC81250M

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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