MJD31C datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

8.33

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0)

VCE = Max Rating

µA

ICEO

Collector Cut -of f

Current (IB =0)

VCE =60 V

µA

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

0.1

VCEO(sus)

Collector-Emit ter

Sustaining Voltage

IC =30 mA

for MJD31B/32B

for MJD31C/32C

100

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =3 A

IB = 375 mA

1.2

VBE(on)

∗ Base-Emitter Voltage

IC =3 A

VCE =4 V

1.8

hFE

∗

DC Current Gain

IC =1 A

VCE =4 V

IC =3 A

VCE =4 V

hfe

Dynamic Current G ain

IC =0. 5 A

VCE =10 V

f = 1 KHz

IC =0. 5 A

VCE =10 V

f = 1 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

For PNP type voltage and current values are negative.

Safe Operating Area

Derating Curves

MJD31B/31C - MJD32B/32C

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