MJD127 datasheet(1/6 Pages) STMICROELECTRONICS

tên linh kiện	MJD127

Giải thích chi tiết về linh kiện	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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MJD122

MJD127

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR- EMITTER DIODE

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICAL SIMILAR TO TIP122 AND

TIP127

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER.

DESCRIPTION

The MJD122 and MJD127 form complementary

NPN - PNP pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbo l

Parameter

Valu e

Un it

NPN

MJD122

PNP

MJD127

VCBO

Collect or-Base Voltage (IE =0)

100

V

VCEO

Collect or-Emitt er Voltage (IB =0)

100

V

VEBO

Emitter-Base Volt age (IC =0)

5

V

IC

Collect or Current

5

A

ICM

Collect or Peak Current

8

A

IB

Base Current

100

mA

Pto t

Total Dissipation at Tcase

≤ 25 oC

20

W

Tstg

Storage T emperature

-65 to 150

oC

Tj

Max. O perating Junction Temperature

150

oC

For PNP types voltage and current values are negative.

1

3

DPAK

TO-252

(Suffix ”T4”)

R1 Typ. = 10 K

Ω

R2 Typ. = 150

Ω

1/6

Số phần tương tự - MJD127

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	MJD127	284Kb / 8P	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
ON Semiconductor	MJD127	284Kb / 8P	Complementary Darlington Power Transistors 1995 REV 1
Samsung semiconductor	MJD127	194Kb / 3P	PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)
Fairchild Semiconductor	MJD127	137Kb / 8P	Complementary Darlington Power Transistors
Fairchild Semiconductor	MJD127	51Kb / 5P	D-PAK for Surface Mount Applications

More results

Mô tả tương tự - MJD127

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Tiger Electronic Co.,Lt...	MJD112	204Kb / 1P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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