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MDS80 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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MDS80 bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() 1/7 MDS35/ 50 / 80Series DIODE / SCR MODULE December 2000 - Ed: 4 MAIN FEATURES: DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge SCR-diode configuration. They are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734). Symbol Value Unit IT(RMS) 50-70-85 A VDRM/VRRM 800 and 1200 V IGT 50 and 100 mA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit 35 50 80 IT(RMS) RMS on-state current 50 70 85 A IT(AV) Average on-state current (Single phase-circuit, 180° conduction angle per device) Tc = 85°C 253555 A ITSM IFSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3 ms Tj = 25°C 420 630 730 A tp = 10 ms 400 600 700 I ²tI²t Value for fusing tp = 10 ms Tj = 25°C 800 1800 2450 A2S dI/dt Critical rate of rise of on-state current IG =2 x IGT ,tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate power dissipation Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40to+ 150 - 40to+ 125 °C VRGM Maximum peak reverse SCR gate voltage 5 V ISOTOP® ISOTOP is a registred trademark of STMicroelectronics PIN CONNECTIONS |
Số phần tương tự - MDS80 |
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Mô tả tương tự - MDS80 |
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