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R7KA8M2AFECAC bảng dữ liệu(PDF) 269 Page - Renesas Technology Corp |
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R7KA8M2AFECAC bảng dữ liệu(HTML) 269 Page - Renesas Technology Corp |
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269 / 295 page  2.15.6 Zeroizing of W-HUK Table 2.121 Zeroizing of W-HUK Characteristics Parameter MRPCLK = 125 MHz MRPCLK = 100 MHz MRPCLK = 75 MHz MRPCLK = 66 MHz Min Typ Max Min Typ Max Min Typ Max Min Typ Max Acton time of Zeroing of W-HUK*1 tZW H — — 793 — — 793 — — 793 — — 793 ms — Note 1. To calculate the updating time at other frequencies, using approximate formula below listed. (FMRPCLK: frequency of MRPCLK [MHz]) tZWH (Max) = 34.52/FMRPCLK + 799 [µs] 2.15.7 MRAM Magnetic Field Immunity Characteristics Table 2.122 MRAM Magnetic field Immunity Characteristics Parameter Symbol Min Typ Max Unit Test conditions Operation Write state Gmax_wr — — 200 Gauss — Read state Gmax_rd — — 200 Gauss — No access state Gmax_noac — — 500 Gauss — Storage Gmax_stg — — 500 Gauss The applied temperature is Tstg. 2.16 Boundary Scan Table 2.123 Boundary scan characteristics (1 of 2) Parameter VCC Symbol Min Typ Max Unit Test conditions TCK clock cycle time 1.62 V or above tTCKcyc 100 — — ns Figure 2.149 TCK clock high pulse width 1.62 V or above tTCKH 0.45 — — tTCKcyc TCK clock low pulse width 1.62 V or above tTCKL 0.45 — — tTCKcyc TCK clock rise time 1.62 V or above tTCKr — — 0.05*2 tTCKcyc TCK clock fall time 1.62 V or above tTCKf — — 0.05*2 tTCKcyc TMS setup time 1.62 V or above tTMSS 20 — — ns Figure 2.150 TMS hold time 1.62 V or above tTMSH 20 — — ns TDI setup time 1.62 V or above tTDIS 20 — — ns TDI hold time 1.62 V or above tTDIH 20 — — ns TDO data delay 1.62 V or above tTDOD — — 40 ns RA8M2 Datasheet 2. Electrical Characteristics R01DS0438EJ0130 Rev.1.30 Feb 27, 2026 Page 269 of 295 |
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