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AS7341 bảng dữ liệu(PDF) 9 Page - ams-OSRAM AG

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AS7341 bảng dữ liệu(HTML) 9 Page - ams-OSRAM AG

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AS7341
Electrical Characteristics
Datasheet
• PUBLIC
DS000504
• v3-00 • 2020-Jun-25
68
│ 8
5
Electrical Characteristics
All limits are guaranteed. The parameters with Min and Max values are guaranteed with production
tests or SQC (Statistical Quality Control) methods. All voltages with respect to GND/PGND. Device
parameters are guaranteed at VDD=1.8V and TA=25°C unless otherwise noted.
Figure 6:
Electrical Characteristics of AS7341
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Supply Voltage
1.7
1.8
2.0
V
TA
Operating free-air
temperature(1)
-30
25
70
°C
Power Consumption
IDD
Supply Current(2)
VDD=1.8V; TA=25°C
Active mode(3)
210
300
µA
VDD=1.8V; TA=25°C
Idle mode(4)
35
60
µA
VDD=1.8V; TA=25°C
Sleep mode(5)
0.7
5
µA
Digital pins
VIH
SCL,SDA input high
voltage
1.26
V
VIL
SCL,SDA input low
voltage
0.54
V
VOL
INT, SDA output low
voltage
6mA sink current
0.4
V
CI
Input pin capacitance
10
pF
Ileak
Leakage current into
SCL,SDA,INT pins
-5
5
µA
GPIO
CLOAD
Maximum capacitive
load GPIO
20
pF
(1)
While the device is operational across the temperature range, functionality will vary with temperature.
(2)
Supply current values are shown at the VDD pin and do not include current through pin LDR.
(3)
Active state occurs during active integration. (PON = “1” ; SP_EN = “1”) If wait is enabled (WEN = “1”), supply current is
lower during the wait period
(4)
Idle state occurs when PON = “1” and all functions are disabled
(5)
Sleep state occurs when PON = “0” and I2C bus is idle. If I2C traffic is active device automatically enters idle mode.



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