isc Silicon NPN RF Transistor

2SC4536

www.iscsemi.com

1

FEATURES

· Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA

· Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz

· Small package : 3-pin power minimold package

APPLICATIONS

· Designed for use in middle power , low distortion low noise

figure RF amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

3.0

V

IC

Collector Current-Continuous

0.25

A

PC

Collector Power Dissipation

@TC=25℃

2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃