RA4M2 datasheet(25/93 Pages) RENESAS

25 / 93 page

2.2.4

I/O VOH, VOL, and Other Characteristics

Table 2.6

I/O VOH, VOL, and other characteristics

Parameter

Symbol Min

Typ Max Unit Test conditions

Output voltage

IIC

VOL

—

0.4

IOL = 3.0 mA

VOL

—

0.6

IOL = 6.0 mA

IIC*1

VOL

—

0.4

IOL = 15.0 mA (ICFER.FMPE = 1)

VOL

—

0.4 —

IOL = 20.0 mA (ICFER.FMPE = 1)

Ports P205, P206, P407 to

P415, P708 (total 12 pins)*2

VOH

VCC – 1.0 —

—

IOH = –20 mA

VCC = 3.3 V

VOL

—

1.0

IOL = 20 mA

VCC = 3.3 V

Other output pins

VOH

VCC – 0.5 —

—

IOH = –1.0 mA

VOL

—

0.5

IOL = 1.0 mA

Input leakage current

RES

|Iin|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Port P200

—

1.0

Vin = 0 V

Vin = VCC

Three-state leakage current

(off state)

5 V-tolerant ports

|ITSI|

—

5.0

µA

Vin = 0 V

Vin = 5.5 V

Other ports (except for port

P200)

—

1.0

Vin = 0 V

Vin = VCC

Input pull-up MOS current

Ports P0 to P7

–300

—

–10 µA

VCC = 2.7 to 3.6 V

Vin = 0 V

Input capacitance

Ports P014, P015

Cin

—

Vbias = 0 V

Vamp = 20 mV

f = 1 MHz

Ta = 25°C

USB_DP and USB_DM

—

Ports P400, P401

—

Other input pins

—

Note 1. SCL0_A, SDA0_A (total 2 pins).

Note 2. This is the value when high driving ability is selected in the Port Drive Capability bit in the PmnPFS register.

The selected driving ability is retained in Deep Software Standby mode.

RA4M2 Datasheet

2. Electrical Characteristics

R01DS0367EJ0140 Rev.1.40

May 9, 2025

Page 25 of 93

RA4M2 bảng dữ liệu(PDF) 25 Page - Renesas Technology Corp

RA4M2 bảng dữ liệu(HTML) 25 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93

bảng dữ liệu tải về

Link URL