M59DR008F datasheet(19/37 Pages) STMICROELECTRONICS

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M59DR008E, M59DR008F

Table 22. DC Characteristics

(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)

Note: 1. Sampled only, not 100% tested.

2. VPP may be connected to 12V power supply for a total of less than 100 hrs.

3. For standard program/erase operation VPP is don’t care.

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VDD

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤ VDD

±5

µA

ICC1

Supply Current

(Read Mode)

E = VIL, G = VIH, f = 6MHz

ICC2

Supply Current

(Power Down)

RP = VSS ± 0.2V

210

µA

ICC3

Supply Current (Standby)

E = VDD ± 0.2V

µA

ICC4

(1)

Supply Current

(Program or Erase)

Word Program, Block Erase

in progress

ICC5

(1)

Supply Current

(Dual Bank)

Program/Erase in progress

in one Bank, Read in the

other Bank

IPP1

VPP Supply Current

(Program or Erase)

VPP = 12V ± 0.6V

510

IPP2

VPP Supply Current

(Standby or Read)

VPP ≤ VCC

0.2

µA

VPP = 12V ± 0.6V

100

400

µA

VIL

Input Low Voltage

–0.5

0.4

VIH

Input High Voltage

VDDQ –0.4

VDDQ + 0.4

VOL

Output Low Voltage

IOL = 100µA

0.1

VOH

Output High Voltage

CMOS

IOH = –100µA

VDDQ –0.1

VPP

(2,3)

VPP Supply Voltage

(Program or Erase)

–0.4

VDD + 0.4

Double Word Program

11.4

12.6

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